K1529 Datasheet - Toshiba Semiconductor

K1529 2SK1529

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 55~150 Unit V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Dr.

K1529-ToshibaSemiconductor.pdf