K1529 - 2SK1529
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 55~150 Unit V V A W °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE Dr
