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K1529 Datasheet - Toshiba Semiconductor

K1529 - 2SK1529

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 55~150 Unit V V A W °C °C 1.

GATE 2.

DRAIN (HEAT SINK) 3.

SOURCE Dr

K1529-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K1529

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

173.22 KB

Description:

2sk1529.

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