K15A50D Datasheet - Toshiba Semiconductor

K15A50D Silicon N-Channel MOS Type FET

www.DataSheet.co.kr TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source vo.

K15A50D Datasheet (240.66 KB)