K3017 Datasheet - Toshiba Semiconductor

K3017 2SK3017

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK3017 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.DataSheet4U.com : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain <.

K3017_ToshibaSemiconductor.pdf