K3798 Datasheet - Toshiba Semiconductor

K3798 2SK3798

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Sy Drain-source voltage Drain-gate voltage (RGS .

K3798 Datasheet (357.71 KB)