Datasheet Specifications
- Part number
- K3798
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 357.71 KB
- Datasheet
- K3798-ToshibaSemiconductor.pdf
- Description
- 2SK3798
Description
2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications <.
Applications
* Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p. ) High forward transfer admittance: |Yfs| = 2.8 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) CharacteristiK3798 Distributors
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