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K4017 Datasheet - Toshiba Semiconductor

K4017 Silicon N-Channel MOS Type FET

2SK4017 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain

K4017 Features

* nt, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure o

K4017 Datasheet (221.91 KB)

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Datasheet Details

Part number:

K4017

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

221.91 KB

Description:

Silicon n-channel mos type fet.

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K4017 Silicon N-Channel MOS Type FET Toshiba Semiconductor

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