K5A50D Datasheet - Toshiba Semiconductor

K5A50D TK5A50D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain cur.

K5A50D Features

* ities, equipment used in the ae

K5A50D Datasheet (200.83 KB)

K5A50D Datasheet Preview — Preview of K5A50D PDF

Datasheet Details

Part number:

K5A50D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

200.83 KB

Description:

tk5a50d.

📁 Related Datasheet

K5A2 Snap Action Key Switch Switch (ITT Industries)

K5A3240YBC-T755 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM (Samsung semiconductor)

K5A3240YBC-T855 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM (Samsung semiconductor)

K5A3240YT Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM (Samsung semiconductor)

K5A3240YTC-T755 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM (Samsung semiconductor)

K5A3240YTC-T855 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM (Samsung semiconductor)

K5A3280YBC-T755 MCP MEMORY (Samsung semiconductor)

K5A3280YBC-T855 MCP MEMORY (Samsung semiconductor)

K5A3280YTC-T755 MCP MEMORY (Samsung semiconductor)

K5A3280YTC-T855 MCP MEMORY (Samsung semiconductor)

TAGS

K5A50D TK5A50D Toshiba Semiconductor

Image Gallery

K5A50D Distributor