K5A50D Datasheet - Toshiba Semiconductor

K5A50D TK5A50D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain cur.

K5A50D Features

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K5A50D_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K5A50D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

200.83 KB

Description:

tk5a50d.

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K5A50D K5A50D TK5A50D Toshiba Semiconductor

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