K5A3280YBC-T755 - MCP MEMORY

This page provides the datasheet information for the K5A3280YBC-T755, a member of the K5A MCP MEMORY family.

Datasheet Summary

Description

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM.

The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit.

Features

Power Supply voltage : 2.7V to 3.3V.
Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit.
Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns.
Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 22 mA Standby Current : 0.5 µA.
Secode(Security Code) B.

Samsung semiconductor

📥 Download Datasheet

Datasheet Details

Part number	K5A3280YBC-T755
Manufacturer	Samsung semiconductor
File Size	625.28 KB
Description	MCP MEMORY
Datasheet	K5A3280YBC-T755 Datasheet
Additional preview pages of the K5A3280YBC-T755 datasheet.

📁 Similar Datasheet

K5A2 - Snap Action Key Switch Switch (ITT Industries)
K5A50D - TK5A50D (Toshiba Semiconductor)
K5A53D - N-Channel 650V Power MOSFET (VBsemi)
K5A60D - TK5A60D (Toshiba)
K5A60D - N-Channel 650V Power MOSFET (VBsemi)
K5A65D - TK5A65D (Toshiba)
K5A65D - N-Channel 650V Power MOSFET (VBsemi)
K5A65DA - N-Channel 650V Power MOSFET (VBsemi)

Other Datasheets by Samsung semiconductor

K5A3280YBC-T855 - MCP MEMORY
K5A3280YTC-T755 - MCP MEMORY
K5A3280YTC-T855 - MCP MEMORY
K5A3240YBC-T755 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YBC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YT - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YTC-T755 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YTC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

Full PDF Text Transcription

Click to expand full text

K5A3x80YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 November 2002 K5A3x80YT(B)C Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM FEATURES • Power Supply voltage : 2.7V to 3.

Published: Apr 7, 2005 |