K5A65D - TK5A65D
TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage Drain c
K5A65D Features
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