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MT3S05T Datasheet - Toshiba Semiconductor

MT3S05T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

www.DataSheet4U.com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent collector current linearity |S21e|2 = 8.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage tempera.

MT3S05T Datasheet (107.35 KB)

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Datasheet Details

Part number:

MT3S05T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

107.35 KB

Description:

Transistor silicon npn epitaxial planar type.

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MT3S05T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Toshiba Semiconductor

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