Datasheet4U Logo Datasheet4U.com

MT3S08T Datasheet - Toshiba Semiconductor

MT3S08T SILICON NPN EPITAXIAL PLANAR TYPE

www.DataSheet4U.com MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC T.

MT3S08T Datasheet (106.06 KB)

Preview of MT3S08T PDF
MT3S08T Datasheet Preview Page 2 MT3S08T Datasheet Preview Page 3

Datasheet Details

Part number:

MT3S08T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

106.06 KB

Description:

Silicon npn epitaxial planar type.

📁 Related Datasheet

MT3S03AS SILICON NPN EPITAXIAL PLANAR TYPE (Toshiba Semiconductor)

MT3S03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (Toshiba Semiconductor)

MT3S03AU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (Toshiba Semiconductor)

MT3S04AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (Toshiba Semiconductor)

MT3S04AS SILICON NPN EPITAXIAL PLANAR TYPE (Toshiba Semiconductor)

MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (Toshiba Semiconductor)

MT3S04AU TRANSISTOR SILICON NPN EPITAXIAL TYPE (Toshiba Semiconductor)

MT3S05T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (Toshiba Semiconductor)

TAGS

MT3S08T SILICON NPN EPITAXIAL PLANAR TYPE Toshiba Semiconductor

MT3S08T Distributor