Datasheet Specifications
- Part number
- MT3S08T
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 106.06 KB
- Datasheet
- MT3S08T_ToshibaSemiconductor.pdf
- Description
- SILICON NPN EPITAXIAL PLANAR TYPE
Description
www.DataSheet4U.com MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications * * S.
Applications
* Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperaMT3S08T Distributors
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