Datasheet4U Logo Datasheet4U.com

TJ20A10M3 Datasheet - Toshiba Semiconductor

TJ20A10M3 Field Effect Transistor

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characte.

TJ20A10M3-ToshibaSemiconductor.pdf

Preview of TJ20A10M3 PDF
TJ20A10M3 Datasheet Preview Page 2 TJ20A10M3 Datasheet Preview Page 3

Datasheet Details

Part number:

TJ20A10M3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

304.22 KB

Description:

Field effect transistor.

📁 Related Datasheet

TJ200A Current Transducer (Topstek)

TJ200F04M3L Silicon P-Channel MOSFET (Toshiba)

TJ20S04M3L Silicon P-Channel MOSFET (Toshiba)

TJ2100 Adjustable Current Limited Power Distribution Switch (HTC Korea)

TJ2100AGQ Adjustable Current Limited Power Distribution Switch (HTC Korea)

TJ2100AGSF6 Adjustable Current Limited Power Distribution Switch (HTC Korea)

TJ2100HGQ Adjustable Current Limited Power Distribution Switch (HTC Korea)

TJ2100HGSF6 Adjustable Current Limited Power Distribution Switch (HTC Korea)

TAGS

TJ20A10M3 TJ20A10M3 Field Effect Transistor Toshiba Semiconductor

TJ20A10M3 Distributor