Part number:
TJ20A10M3
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
304.22 KB
Description:
Field effect transistor.
TJ20A10M3-ToshibaSemiconductor.pdf
Datasheet Details
TJ20A10M3-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TJ20A10M3
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
304.22 KB
Description:
Field effect transistor.
TJ20A10M3, Field Effect Transistor
TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characte
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