TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 1.14 ± 0.15 2.8 MAX.
13 ± 0.5 2.6 ± 0.1 4.5
