TK12A50E Datasheet, Mosfets, Toshiba Semiconductor

TK12A50E Features

• Mosfets (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V,

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Part number:

TK12A50E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

229.97kb

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📄 Datasheet

Description:

Mosfets.

TK12A50E Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Lo

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TK12A50E

Toshiba Semiconductor

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