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TK12A60U - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) = 0.4Ω.
  • Low leakage current: IDSS = 100μA (max) (VDS = 600 V).
  • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for TK12A60U (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60U,ITK12A60U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.4Ω ·Low leakage current: IDSS = 100μA (ma...

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e on-resistance: RDS(ON) = 0.4Ω ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 35 Tj Max.

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