TK12A60U Datasheet (PDF) Download
Inchange Semiconductor
TK12A60U

Key Features

  • Low drain-source on-resistance: RDS(ON) = 0.4Ω
  • Low leakage current: IDSS = 100μA (max) (VDS = 600 V)
  • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Switching Voltage Regulators