Part number:
TK4P50D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
854.53 KB
Description:
Silicon n-channel mosfet.
* (1) Low drain-source on-resistance : RDS(ON) = 1.7 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 1.5 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P50D DPAK 1: Ga
TK4P50D
Toshiba ↗ Semiconductor
854.53 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK4P50D - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
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·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2Ω (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 .
TK4P50DA - N-Channel MOSFET
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·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2.45mΩ (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS .
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·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.88Ω (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = .
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MOSFETs Silicon N-Channel MOS (π-MOS)
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1. Applications
• Switching Voltage Regulators
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(1) Low drain-source on-resistance : RDS(ON).
TK4P55DA - Silicon N-Channel MOSFET
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• Switching Voltage Regulators
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1. Applications
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·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gat.
