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TK4P60D

Silicon N-Channel MOSFET

TK4P60D Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60D 1: Gate (G) 2:

TK4P60D Datasheet (234.02 KB)

Preview of TK4P60D PDF

Datasheet Details

Part number:

TK4P60D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.02 KB

Description:

Silicon n-channel mosfet.

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TK4P60D Silicon N-Channel MOSFET Toshiba Semiconductor

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