TK40A10K3 Datasheet (Toshiba Semiconductor)

TK40A10K3, Field Effect Transistor

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current D

TK40A10K3 Features

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