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TK40E10N1 Datasheet - Toshiba Semiconductor

TK40E10N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK40E10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

255.11 KB

Description:

Silicon n-channel mosfet.

TK40E10N1, Silicon N-Channel MOSFET

TK40E10N1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK40E10N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolu

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TK40E10N1 Silicon N-Channel MOSFET Toshiba Semiconductor
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