TK40E10N1 Datasheet, MOSFET, Toshiba Semiconductor

TK40E10N1 Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V,

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Part number:

TK40E10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

255.11kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK40E10N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low lea

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TK40E10N1

Toshiba Semiconductor

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