Datasheet Specifications
- Part number
- TK40A10J1
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 177.79 KB
- Datasheet
- TK40A10J1-ToshibaSemiconductor.pdf
- Description
- MOSFET
Description
TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regulator Applications * <.
Features
* r use in equipment or systems thaApplications
* Unit: mm Small gate charge: Qg = 76nC (typ. ) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ. ) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10TK40A10J1 Distributors
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