Datasheet4U Logo Datasheet4U.com

TK40A10N1

Silicon N-Channel MOSFET

TK40A10N1 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings

TK40A10N1 Datasheet (232.97 KB)

Preview of TK40A10N1 PDF

Datasheet Details

Part number:

TK40A10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

232.97 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TK40A10N1 N-Channel MOSFET (INCHANGE)

TK40A10J1 MOSFET (Toshiba Semiconductor)

TK40A10K3 Field Effect Transistor (Toshiba Semiconductor)

TK40A06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK40A06N1 N-Channel MOSFET (INCHANGE)

TK40A08K3 MOSFET (Toshiba Semiconductor)

TK40D10J1 MOSFET (Toshiba Semiconductor)

TK40E06N1 N-Channel MOSFET (INCHANGE)

TK40E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK40E10N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TK40A10N1 Silicon N-Channel MOSFET Toshiba Semiconductor

Image Gallery

TK40A10N1 Datasheet Preview Page 2 TK40A10N1 Datasheet Preview Page 3

TK40A10N1 Distributor