TK40D10J1 Datasheet (Toshiba Semiconductor)

TK40D10J1, MOSFET

www.DataSheet4U.com TK40D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40D10J1 Switching Regulator Applications 10.0±0.3 Unit: mm 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 1

TK40D10J1 Features

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