TK4P60DB Datasheet - Toshiba Semiconductor

TK4P60DB-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK4P60DB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

835.15 KB

Description:

Silicon n-channel mosfet.

TK4P60DB, Silicon N-Channel MOSFET

TK4P60DB Features

* (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60DB DPAK 1: G

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TK4P60DB Silicon N-Channel MOSFET Toshiba Semiconductor

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