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TPC8002 N-Channel MOSFET

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Description

TPC8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSVI) TPC8002 Lithium Ion Battery Applications Portable Equipment Appl.

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Applications

* Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain
* source ON resistance : RDS (ON) = 11.5 mΩ (typ. ) High forward transfer admittance : |Yfs| = 15 S (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement
* m

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