TPC8003 Datasheet (Toshiba Semiconductor)

TPC8003, N-Channel MOSFET

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain source ON resistance : RDS (ON) = 5.4 mΩ (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C