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TPC8012-H Datasheet - Toshiba Semiconductor

TPC8012-H Field Effect Transistor

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application DC-DC Converters Unit: mm Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW).

TPC8012-H_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC8012-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.37 KB

Description:

Field effect transistor.

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TPC8012-H TPC8012-H Field Effect Transistor Toshiba Semiconductor

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