Datasheet4U Logo Datasheet4U.com

TPC8012-H Datasheet - Toshiba Semiconductor

TPC8012-H Field Effect Transistor

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application DC-DC Converters Unit: mm Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW).

TPC8012-H Datasheet (154.37 KB)

Preview of TPC8012-H PDF
TPC8012-H Datasheet Preview Page 2 TPC8012-H Datasheet Preview Page 3

Datasheet Details

Part number:

TPC8012-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.37 KB

Description:

Field effect transistor.

📁 Related Datasheet

TPC8010-H N-Channel MOSFET (Toshiba Semiconductor)

TPC8013-H Field Effect Transistor (Toshiba Semiconductor)

TPC8014 Field Effect Transistor (Toshiba Semiconductor)

TPC8016-H Field Effect Transistor (Toshiba Semiconductor)

TPC8017-H Field Effect Transistor (Toshiba Semiconductor)

TPC8018-H Silicon N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

TPC8001 N-Channel MOSFET (Toshiba Semiconductor)

TPC8002 N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TPC8012-H Field Effect Transistor Toshiba Semiconductor

TPC8012-H Distributor