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TPC8013-H Field Effect Transistor

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Description

TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters.

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Applications

* Portable Equipment Applications
* Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ. ) Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ. ) High forward transfer admittance: |Yfs| = 25 S (typ. ) Low leakage

TPC8013-H Distributors

📁 Related Datasheet

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📌 All Tags

TPC8013-H Field Effect Transistor Toshiba Semiconductor
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