TPC8058-H Datasheet - Toshiba Semiconductor

TPC8058-H, MOSFETs

TPC8058-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8058-H 1.Applications * * * High-Efficiency DC-DC Converters Notebook .

Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 12 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10

TPC8058-H-ToshibaSemiconductor.pdf