TPC8061-H Datasheet - Toshiba

TPC8061-H Silicon N-Channel MOSFET

TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS VI-H) TPC8061-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enh.

TPC8061-H_Toshiba.pdf