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TPC8063-H Datasheet - Toshiba Semiconductor

TPC8063-H MOSFETs

TPC8063-H Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 5.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 1

TPC8063-H Datasheet (222.27 KB)

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Datasheet Details

Part number:

TPC8063-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

222.27 KB

Description:

Mosfets.

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TPC8063-H MOSFETs Toshiba Semiconductor

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