TPC8062-H - MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPC8062-H
Manufacturer	Toshiba Semiconductor
File Size	223.65 KB
Description	MOSFET
Datasheet	TPC8062-H-ToshibaSemiconductor.pdf

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-.

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Published: Aug 30, 2014 |