* (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packag
TPC8065-H Datasheet (281.20 KB)
TPC8065-H
281.20 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8065-H
1. Applications
* High-Efficiency DC-DC Converters
* Notebook PCs
* Mobile .
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