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TPC8055-H - MOSFETs

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Features

  • (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 21 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-so.

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Datasheet Details

Part number TPC8055-H
Manufacturer Toshiba Semiconductor
File Size 222.07 KB
Description MOSFETs
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TPC8055-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8055-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 21 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
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