The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC8053-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8053-H
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
Unit: mm
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.7 nC (typ.) • Low drain-source ON-resistance:
RDS (ON) = 14.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.