TPC8059-H Datasheet - Toshiba Semiconductor

TPC8059-H, MOSFETs

TPC8059-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8059-H 1.Applications * * * High-Efficiency DC-DC Converters Notebook .

Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 9.1 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 1

TPC8059-H-ToshibaSemiconductor.pdf