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TPC8402 Datasheet - Toshiba Semiconductor

TPC8402 MOSFET

TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π MOSVI/U MOSII) TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications Low drain source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.) Low leakage current : P Channel IDSS = 10 µA (VDS = 30 V) N Channel IDSS = 10 µ.

TPC8402 Features

* injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA pro

TPC8402 Datasheet (719.84 KB)