TPC8402 Datasheet - Toshiba Semiconductor

TPC8402, MOSFET

TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π *MOSVI/U *MOSII) TPC8402 Lithium Ion Secondary Battery Applica.

Features

* injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. . Unintended Usage of TOSHIBA pro

Applications

* Notebook PCs Portable Equipment Applications Low drain
* source ON resistance : P Channel RDS (ON) = 27 mΩ (typ. ) N Channel RDS (ON) = 37 mΩ (typ. ) High forward transfer admittance : P Channel |Yfs| = 7 S (typ. ) N Channel |Yfs| = 6 S (typ. ) Low leakage current : P Channel IDSS =
* 10 µA

TPC8402_ToshibaSemiconductor.pdf