TPCS8303 Datasheet - Toshiba Semiconductor

TPCS8303 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

www.DataSheet4U.com TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth =

TPCS8303 Features

* IBA or others.

* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the bu

TPCS8303_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCS8303

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

257.67 KB

Description:

Toshiba field effect transistor silicon p channel mos type.

TPCS8303 Distributor

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TPCS8303 TOSHIBA Field Effect Transistor Silicon Channel MOS Type Toshiba Semiconductor