TPCS8007-H Datasheet - Toshiba Semiconductor

TPCS8007-H - N-Channel MOSFET

TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8007-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =.

TPCS8007-H Features

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TPCS8007-H-ToshibaSemiconductor.pdf