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TPCS8102 Datasheet - Toshiba Semiconductor

TPCS8102 Silicon P-Channel MOS Type Field Effect Transistor

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~ 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm .

TPCS8102_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCS8102

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

392.75 KB

Description:

Silicon p-channel mos type field effect transistor.

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TPCS8102 TPCS8102 Silicon P-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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