TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~ 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm
TPCS8102_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPCS8102
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
392.75 KB
Description:
Silicon p-channel mos type field effect transistor.