TPCS8101 - Silicon P-Channel MOS Type Field Effect Transistor
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance: |Yfs| = 12 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement-mode: Vth = 0.8~ 2.0 V (VDS = 10 V, ID = 1 mA) Un
