TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 0.8 to
TPCS8104_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPCS8104
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
378.99 KB
Description:
Silicon p-channel mos type field effect transistor.