TPCS8104 Datasheet - Toshiba Semiconductor

TPCS8104 Silicon P-Channel MOS Type Field Effect Transistor

TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 0.8 to

TPCS8104 Features

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TPCS8104_ToshibaSemiconductor.pdf