TPCS8105 - N-Channel MOSFET
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth =
TPCS8105 Features
* ok” etc.
* The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted
