2847 Datasheet - Toshiba

2847 2SK2847

2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2847 DC DC Converter and Motor Drive Applications z Low drain source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain .

2847 Features

* details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR

2847 Datasheet (415.10 KB)