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2847 2SK2847

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Description

2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2847 DC *DC Converter and Motor Drive Applications z.

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Features

* details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR

Applications

* z Low drain
* source ON resistance : RDS (ON) = 1.1 Ω (typ. ) z High forward transfer admittance : |Yfs| = 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°

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2847 2SK2847 Toshiba
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