2N5301 Datasheet, Transistor, Toshiba

2N5301 Features

• Transistor . Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30A, I B=6A . Low Saturation Voltage: VcE(sat)=0.75V (Max.) VBE(sat)=l-7

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2N5301

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Toshiba ↗

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📄 Datasheet

Description:

Silicon npn transistor.

2N5301 Application

• Applications Unit in mm FEATURES . Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30

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2N5301

Toshiba

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