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2N5301 Datasheet - Toshiba

2N5301 SILICON NPN Transistor

2N5301 Features

* . Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30A, I B=6A . Low Saturation Voltage: VcE(sat)=0.75V (Max.) VBE(sat)=l-7V (Max.) @ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A . High Collector Power Dissipation Capability: PC =200W (Max.) .

2N5301 Datasheet (112.61 KB)

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Datasheet Details

Part number:

2N5301

Manufacturer:

Toshiba ↗

File Size:

112.61 KB

Description:

Silicon npn transistor.

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2N5301 SILICON NPN Transistor Toshiba

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