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2N5302 SILICON NPN Transistor

2N5302 Description

: 2N5302 3 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATU.

2N5302 Features

* . Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max. ) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max. ) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max. ) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W

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SILICON NPN Transistor Toshiba
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