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2N5302 Datasheet - Toshiba

2N5302 SILICON NPN Transistor

2N5302 Features

* . Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min.) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max.) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max.) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max.) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W

2N5302-Toshiba.pdf

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Datasheet Details

Part number:

2N5302

Manufacturer:

Toshiba ↗

File Size:

111.07 KB

Description:

Silicon npn transistor.

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2N5302 2N5302 SILICON NPN Transistor Toshiba

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