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2N5303 Datasheet - Toshiba

2N5303 SILICON NPN Transistor

2N5303 Features

* . High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min.) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min.) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max.) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max.) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max

2N5303-Toshiba.pdf

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Datasheet Details

Part number:

2N5303

Manufacturer:

Toshiba ↗

File Size:

106.70 KB

Description:

Silicon npn transistor.

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2N5303 2N5303 SILICON NPN Transistor Toshiba

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