Datasheet Specifications
- Part number
- 2N5303
- Manufacturer
- Toshiba ↗
- File Size
- 106.70 KB
- Datasheet
- 2N5303-Toshiba.pdf
- Description
- SILICON NPN Transistor
Description
: SILICON NPN TRIPLE DIFFUSED TYPE , 2N5303 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATU.Features
* . High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min. ) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max. ) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max. ) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max2N5303 Distributors
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