Datasheet4U Logo Datasheet4U.com

2N5303 Datasheet - Toshiba

2N5303 SILICON NPN Transistor

2N5303 Features

* . High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min.) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min.) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max.) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max.) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max

2N5303 Datasheet (106.70 KB)

Preview of 2N5303 PDF
2N5303 Datasheet Preview Page 2 2N5303 Datasheet Preview Page 3

Datasheet Details

Part number:

2N5303

Manufacturer:

Toshiba ↗

File Size:

106.70 KB

Description:

Silicon npn transistor.

📁 Related Datasheet

2N5301 POWER TRANSISTORS (ON Semiconductor)

2N5301 Bipolar NPN Device (Seme LAB)

2N5301 Silicon NPN Power Transistors (Inchange Semiconductor)

2N5301 NPN SILICON POWER TRANSISTOR (SSDI)

2N5301 Bipolar Transistor (Multicomp)

2N5301 Silicon NPN Transistor (NTE)

2N5301 N-CHANNEL JFET (Micross)

2N5301 SILICON NPN Transistor (Toshiba)

TAGS

2N5303 SILICON NPN Transistor Toshiba

2N5303 Distributor