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2SA1322 Datasheet - Toshiba

2SA1322 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

2SA1322 Features

* . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation Ta=25°C Tc=25°C

2SA1322-Toshiba.pdf

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Datasheet Details

Part number:

2SA1322

Manufacturer:

Toshiba ↗

File Size:

118.32 KB

Description:

Silicon pnp epitaxial type transistor.

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