2SA1322 - SILICON PNP EPITAXIAL TYPE TRANSISTOR
2SA1322 Features
* . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation Ta=25°C Tc=25°C
