✔ 2SC1763 Features
. Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Minimum Gain : Gp e =16dB : Efficiency : >7c = 40%(Min. : Intermodulation Distortion : IMD=-30dB(Ma
✔ 2SC1763 Application
(28V SUPPLY VOLTAGE USE)
FEATURES
. Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Mi
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Part number:
2SC1763
Manufacturer:
Toshiba ↗
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📄 Datasheet
Description:
Silicon npn transistor.
2SC1760 - Transistor
(Sony Corporation)
.
2SC1764 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (20V SUPPLY VOLTAGE USE)
FEATURES Specified 28V, 28MHz Characteri.
2SC1765 - SILICON NPN TRANSISTOR
(Toshiba)
:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =2. 8W(Min.
(f=470MHz, Vcc=12.6V, Pi=0.6W) . .
2SC1766 - NPN Transistor
(WILLAS)
WILLAS
SO1.0TA-S8U9RFPAClEasMOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIETRrRaEnCTsIFiIsERtoS r-2s0V- 200V
SOD-123+ PACKAGE
FM120-M+ 2SC1766 THRU
FM1200-M
Pb Fr.
2SC1766 - NPN Transistor
(GME)
Production specification
NPN Epitaxial Transistor
FEATURES
Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time .
2SC1766 - GENERAL PURPOSE TRANSISTOR
(HOTTECH)
REPLACEMENT TYPE : 2SC1766
FEATURES Small Flat Package High Speed Switching Time Low Collector-Emitter Saturation Voltage
HEC1766(NPN)
GENERAL .
2SC1766PT - NPN Epitaxial Transistor
(Chenmko Enterprise)
CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT NPN Epitaxial Transistor
VOLTAGE 50 Volts
APPLICATION
* Power amplifier .
2SC1766PT
CURRENT 2 Ampere
FEATURE
.
2SC1706 - Silicon NPN Transistor
(Hitachi Semiconductor)
..
.
2SC1707 - Silicon NPN Transistor
(Hitachi Semiconductor)
..
.
2SC1722 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1722
DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collect.
