2SC2565 Silicon NPN Transistor

Toshiba

Description

2SC2565 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2SC2565
Manufacturer: Toshiba ↗
File Size: 89.38 KB
Datasheet: 2SC2565_Toshiba.pdf
Description: Silicon NPN Transistor

Features

* High Breakdown Voltage : V CEO=160V
* High Transition Frequency : f T=80MHz (Typ. )
* Complementary to 2SA1095.
* Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emi

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2SC2565 Silicon NPN Transistor Toshiba

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