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2SC2565 Silicon NPN Transistor

2SC2565 Description

2SC2565 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS..

2SC2565 Features

* High Breakdown Voltage : V CEO=160V
* High Transition Frequency : f T=80MHz (Typ. )
* Complementary to 2SA1095.
* Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emi

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Silicon NPN Transistor Toshiba
Toshiba 2SC2565-like datasheet