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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2754
HIGH FREQUENCY AMPLIFIER APPLICATIONS, LOW FREQUENCY AMPLIFIER APPLICATIONS, HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
. High Transition Frequency : f T=400MHz(Typ. . Low VcE(sat) : V CE ( sat) =0. 5V(Max. . Small Collector Output Capacitance : C b=3. 5pF(Max. . High Speed Switching.
. Designed for Complementary Use with 2SA1164.
MAXIMUM RATINGS (Ta=2 5°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
35
Collector-Emitter Voltage
VCEO
30
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
VEBO
ic IB PC
100
mA
50
mA
200
mW
1. EMITTER 2. COLLECTOR 3.
2SC2754 Datasheet
