* . Excellent Switching Times : t r=1.0AS (Max.), t f =1.0AS (Max. ) (Ic=3A) . High Collector Breakdown Voltage : Vceo=8 °0v Unit in mm ZteSOMAX , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VcEO 800 V Emitter-Bas
2SC2791
94.94 KB
Silicon npn transistor.
:
SILICON NPN TRIPLE DIFFUSED TYPE
I
3
2SC2791
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC.
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